2SD1012G-SPA Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 280 @ 50mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 30mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 80mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The maximum collector current is 700mA volts.

2SD1012G-SPA Features

the DC current gain for this device is 280 @ 50mA 2V
a collector emitter saturation voltage of 30mV
the vce saturation(Max) is 80mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

2SD1012G-SPA Applications

There are a lot of ON Semiconductor 2SD1012G-SPA applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter