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MJD42CRLG

MJD42CRLG

MJD42CRLG

ON Semiconductor

MJD42CRLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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MJD42CRLG Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -6A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJD42
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power Dissipation 1.75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 30
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.059710 $0.05971
500 $0.043904 $21.952
1000 $0.036588 $36.588
2000 $0.033566 $67.132
5000 $0.031371 $156.855
10000 $0.029181 $291.81
15000 $0.028222 $423.33
50000 $0.027750 $1387.5
MJD42CRLG Product Details

MJD42CRLG Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.When VCE saturation is 1.5V @ 600mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -6A.Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.A maximum collector current of 6A volts is possible.

MJD42CRLG Features


the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is -6A
a transition frequency of 3MHz

MJD42CRLG Applications


There are a lot of ON Semiconductor MJD42CRLG applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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