PBHV9414ZX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
PBHV9414ZX Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
Max Power Dissipation
650mW
Terminal Position
DUAL
Terminal Form
GULL WING
Pin Count
4
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
650mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
550mV
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
550mV @ 400mA, 4A
Collector Emitter Breakdown Voltage
140V
Max Breakdown Voltage
140V
Collector Base Voltage (VCBO)
180V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$0.21450
$0.2145
2,000
$0.19800
$0.396
5,000
$0.18700
$0.935
10,000
$0.18150
$1.815
PBHV9414ZX Product Details
PBHV9414ZX Overview
In this device, the DC current gain is 100 @ 10mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 550mV @ 400mA, 4A.There is a breakdown input voltage of 140V volts that it can take.The maximum collector current is 4A volts.
PBHV9414ZX Features
the DC current gain for this device is 100 @ 10mA 5V the vce saturation(Max) is 550mV @ 400mA, 4A
PBHV9414ZX Applications
There are a lot of Nexperia USA Inc. PBHV9414ZX applications of single BJT transistors.