KSD5041QBU Overview

This device has a DC current gain of 230 @ 500mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.The current rating of this fuse is 5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Parts of this part have transition frequencies of 150MHz.In extreme cases, the collector current can be as low as 5A volts.

KSD5041QBU Features

the DC current gain for this device is 230 @ 500mA 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 5A
a transition frequency of 150MHz

KSD5041QBU Applications

There are a lot of ON Semiconductor KSD5041QBU applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver