NZT660A Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 500mA 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 300mA, 3A.The base voltage of the emitter can be kept at -5V to achieve high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.A transition frequency of 75MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
NZT660A Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 75MHz
NZT660A Applications
There are a lot of ON Semiconductor NZT660A applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
