2SD1802S-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SD1802S-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Subcategory
Other Transistors
Max Power Dissipation
1W
Frequency
150MHz
Base Part Number
2SD1802
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 2A
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
190μV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
140
Height
2.3mm
Length
6.5mm
Width
5.5mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.079439
$3.079439
10
$2.905131
$29.05131
100
$2.740689
$274.0689
500
$2.585557
$1292.7785
1000
$2.439204
$2439.204
2SD1802S-TL-E Product Details
2SD1802S-TL-E Overview
DC current gain in this device equals 140 @ 100mA 2V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 190μV, it offers maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 100mA, 2A.The emitter base voltage can be kept at 6V for high efficiency.A breakdown input voltage of 50V volts can be used.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SD1802S-TL-E Features
the DC current gain for this device is 140 @ 100mA 2V a collector emitter saturation voltage of 190μV the vce saturation(Max) is 500mV @ 100mA, 2A the emitter base voltage is kept at 6V
2SD1802S-TL-E Applications
There are a lot of ON Semiconductor 2SD1802S-TL-E applications of single BJT transistors.