2SD1805F-TL-E Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 500mA 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 220mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 60mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A maximum collector current of 5A volts can be achieved.

2SD1805F-TL-E Features

the DC current gain for this device is 160 @ 500mA 2V
a collector emitter saturation voltage of 220mV
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V

2SD1805F-TL-E Applications

There are a lot of ON Semiconductor 2SD1805F-TL-E applications of single BJT transistors.

• Muting
• Driver
• Interface
• Inverter