2SD1805G-E Overview

DC current gain in this device equals 280 @ 500mA 2V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 500mV @ 60mA, 3A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.

2SD1805G-E Features

the DC current gain for this device is 280 @ 500mA 2V
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V

2SD1805G-E Applications

There are a lot of ON Semiconductor 2SD1805G-E applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting