2SD1816S-TL-H Overview
In this device, the DC current gain is 140 @ 500mA 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.When VCE saturation is 400mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In the part, the transition frequency is 180MHz.Collector current can be as low as 4A volts at its maximum.
2SD1816S-TL-H Features
the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816S-TL-H Applications
There are a lot of ON Semiconductor 2SD1816S-TL-H applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
