2SD1816T-TL-H Overview

This device has a DC current gain of 200 @ 500mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 200mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.The maximum collector current is 4A volts.

2SD1816T-TL-H Features

the DC current gain for this device is 200 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz

2SD1816T-TL-H Applications

There are a lot of ON Semiconductor 2SD1816T-TL-H applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface