FCI25N60N-F102

new-10%

Manufacturer part number:FCI25N60N-F102

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 600V 25A I2PAK

Case Package:SOT-23

Datasheet:FCI25N60N-F102 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Weight	2.084g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SupreMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	216W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	216W
Turn On Delay Time	21 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	125m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3352pF @ 100V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	25A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant