30C02MH-TL-H Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 300 @ 50mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 190mV @ 10mA, 200mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Single BJT transistor is possible to have a collector current as low as 700mA volts at Single BJT transistors maximum.

30C02MH-TL-H Features

the DC current gain for this device is 300 @ 50mA 2V
the vce saturation(Max) is 190mV @ 10mA, 200mA
the emitter base voltage is kept at 5V

30C02MH-TL-H Applications

There are a lot of ON Semiconductor 30C02MH-TL-H applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter