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2SAR586D3TL1

  • 2SAR586D3TL1
  • 2SAR586D3TL1

2SAR586D3TL1

2SAR586D3TL1

ROHM Semiconductor

2SAR586D3TL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SAR586D3TL1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 10W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA 3V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 320mV @ 100mA, 2A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 200MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.663710 $1.66371
10 $1.569538 $15.69538
100 $1.480696 $148.0696
500 $1.396883 $698.4415
1000 $1.317814 $1317.814
2SAR586D3TL1 Product Details

2SAR586D3TL1 Overview


This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the collector current and the base current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 320mV @ 100mA, 2A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

2SAR586D3TL1 Features


the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 320mV @ 100mA, 2A

2SAR586D3TL1 Applications


There are a lot of ROHM Semiconductor 2SAR586D3TL1 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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