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NSV12100XV6T1G

NSV12100XV6T1G

NSV12100XV6T1G

ON Semiconductor

NSV12100XV6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NSV12100XV6T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 650mW
Pin Count 6
Power - Max 650mW
Halogen Free Halogen Free
Transistor Type PNP
Collector Emitter Voltage (VCEO) 440mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 440mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 12V
Collector Base Voltage (VCBO) 12V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.654872 $1.654872
10 $1.561200 $15.612
100 $1.472830 $147.283
500 $1.389462 $694.731
1000 $1.310814 $1310.814
NSV12100XV6T1G Product Details

NSV12100XV6T1G Overview


This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 440mV @ 100mA, 1A.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

NSV12100XV6T1G Features


the DC current gain for this device is 100 @ 500mA 2V
the vce saturation(Max) is 440mV @ 100mA, 1A

NSV12100XV6T1G Applications


There are a lot of ON Semiconductor NSV12100XV6T1G applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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