NSV12100XV6T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NSV12100XV6T1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Number of Pins
6
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
650mW
Pin Count
6
Power - Max
650mW
Halogen Free
Halogen Free
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
440mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
440mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
12V
Collector Base Voltage (VCBO)
12V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.654872
$1.654872
10
$1.561200
$15.612
100
$1.472830
$147.283
500
$1.389462
$694.731
1000
$1.310814
$1310.814
NSV12100XV6T1G Product Details
NSV12100XV6T1G Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 440mV @ 100mA, 1A.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
NSV12100XV6T1G Features
the DC current gain for this device is 100 @ 500mA 2V the vce saturation(Max) is 440mV @ 100mA, 1A
NSV12100XV6T1G Applications
There are a lot of ON Semiconductor NSV12100XV6T1G applications of single BJT transistors.