NJV4030PT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NJV4030PT3G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
160MHz
Pin Count
4
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2W
Case Connection
COLLECTOR
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 1A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 300mA, 3A
Collector Emitter Breakdown Voltage
40V
Current - Collector (Ic) (Max)
3A
Transition Frequency
160MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.50000
$0.5
500
$0.495
$247.5
1000
$0.49
$490
1500
$0.485
$727.5
2000
$0.48
$960
2500
$0.475
$1187.5
NJV4030PT3G Product Details
NJV4030PT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 300mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In the part, the transition frequency is 160MHz.A maximum collector current of 3A volts is possible.
NJV4030PT3G Features
the DC current gain for this device is 200 @ 1A 1V the vce saturation(Max) is 500mV @ 300mA, 3A the emitter base voltage is kept at 6V a transition frequency of 160MHz
NJV4030PT3G Applications
There are a lot of ON Semiconductor NJV4030PT3G applications of single BJT transistors.