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NJV4030PT3G

NJV4030PT3G

NJV4030PT3G

ON Semiconductor

NJV4030PT3G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

NJV4030PT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 160MHz
Pin Count 4
Number of Elements 1
Configuration SINGLE
Power Dissipation 2W
Case Connection COLLECTOR
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 300mA, 3A
Collector Emitter Breakdown Voltage 40V
Current - Collector (Ic) (Max) 3A
Transition Frequency 160MHz
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.50000 $0.5
500 $0.495 $247.5
1000 $0.49 $490
1500 $0.485 $727.5
2000 $0.48 $960
2500 $0.475 $1187.5
NJV4030PT3G Product Details

NJV4030PT3G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 1A 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 300mA, 3A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In the part, the transition frequency is 160MHz.A maximum collector current of 3A volts is possible.

NJV4030PT3G Features


the DC current gain for this device is 200 @ 1A 1V
the vce saturation(Max) is 500mV @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 160MHz

NJV4030PT3G Applications


There are a lot of ON Semiconductor NJV4030PT3G applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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