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6985-BC556B

6985-BC556B

6985-BC556B

ON Semiconductor

6985-BC556B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

6985-BC556B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Operating Temperature -55°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 280MHz
RoHS Status ROHS3 Compliant
6985-BC556B Product Details

6985-BC556B Overview


In this device, the DC current gain is 180 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

6985-BC556B Features


the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

6985-BC556B Applications


There are a lot of ON Semiconductor 6985-BC556B applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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