6985-BC556B datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
6985-BC556B Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Operating Temperature
-55°C~150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
280MHz
RoHS Status
ROHS3 Compliant
6985-BC556B Product Details
6985-BC556B Overview
In this device, the DC current gain is 180 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
6985-BC556B Features
the DC current gain for this device is 180 @ 2mA 5V the vce saturation(Max) is 650mV @ 5mA, 100mA
6985-BC556B Applications
There are a lot of ON Semiconductor 6985-BC556B applications of single BJT transistors.