MJD44H11G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 4A 1V.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.When VCE saturation is 1V @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device has a current rating of 8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 85MHz.During maximum operation, collector current can be as low as 8A volts.
MJD44H11G Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 85MHz
MJD44H11G Applications
There are a lot of ON Semiconductor MJD44H11G applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
