BC858BLT1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.100MHz is present in the transition frequency.There is a breakdown input voltage of 30V volts that it can take.In extreme cases, the collector current can be as low as 100mA volts.
BC858BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC858BLT1G Applications
There are a lot of ON Semiconductor BC858BLT1G applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
