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2SA1834TLR

2SA1834TLR

2SA1834TLR

ROHM Semiconductor

2SA1834TLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

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2SA1834TLR Datasheet

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Specifications
Name Value
Type Parameter
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 63
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
HTS Code 8541.29.00.75
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 1W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -10A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SA1834
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Power - Max 1W
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 50mA, 4A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage -160mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) -6V
hFE Min 82
Continuous Collector Current -10A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.155979 $0.155979
10 $0.147150 $1.4715
100 $0.138821 $13.8821
500 $0.130963 $65.4815
1000 $0.123550 $123.55
2SA1834TLR Product Details

2SA1834TLR Overview


This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -160mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is essential to maintain the continuous collector voltage at -10A to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a breakdown input voltage of 20V volts that it can take.When collector current reaches its maximum, it can reach 10A volts.

2SA1834TLR Features


the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -160mV
the vce saturation(Max) is 250mV @ 50mA, 4A
the emitter base voltage is kept at -6V
the current rating of this device is -10A
a transition frequency of 150MHz

2SA1834TLR Applications


There are a lot of ROHM Semiconductor 2SA1834TLR applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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