2SA1834TLR datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
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2SA1834TLR Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
63
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn/Cu)
HTS Code
8541.29.00.75
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
1W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-10A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SA1834
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power - Max
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250mV
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 2V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 50mA, 4A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-160mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-6V
hFE Min
82
Continuous Collector Current
-10A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.155979
$0.155979
10
$0.147150
$1.4715
100
$0.138821
$13.8821
500
$0.130963
$65.4815
1000
$0.123550
$123.55
2SA1834TLR Product Details
2SA1834TLR Overview
This device has a DC current gain of 180 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -160mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is essential to maintain the continuous collector voltage at -10A to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a breakdown input voltage of 20V volts that it can take.When collector current reaches its maximum, it can reach 10A volts.
2SA1834TLR Features
the DC current gain for this device is 180 @ 500mA 2V a collector emitter saturation voltage of -160mV the vce saturation(Max) is 250mV @ 50mA, 4A the emitter base voltage is kept at -6V the current rating of this device is -10A a transition frequency of 150MHz
2SA1834TLR Applications
There are a lot of ROHM Semiconductor 2SA1834TLR applications of single BJT transistors.