BC857BT116 Overview
In this device, the DC current gain is 210 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -100mA for this device.There is a transition frequency of 250MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.Maximum collector currents can be below 100mA volts.
BC857BT116 Features
the DC current gain for this device is 210 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 250MHz
BC857BT116 Applications
There are a lot of ROHM Semiconductor BC857BT116 applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
