MJD117G Overview
This device has a DC current gain of 1000 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 40mA, 4A.In order to achieve high efficiency, the continuous collector voltage should be kept at 2A.An emitter's base voltage can be kept at 5V to gain high efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -2A.Parts of this part have transition frequencies of 25MHz.During maximum operation, collector current can be as low as 2A volts.
MJD117G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
MJD117G Applications
There are a lot of ON Semiconductor MJD117G applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
