US6X6TR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 100mA 2V.When VCE saturation is 350mV @ 50mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 6V allows for a high level of efficiency.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 300MHz in the part.An input voltage of 30V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
US6X6TR Features
the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 300MHz
US6X6TR Applications
There are a lot of ROHM Semiconductor US6X6TR applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
