DCX69-25-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DCX69-25-13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
4
Weight
51.993025mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DCX69
Pin Count
3
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
1W
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
200MHz
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
5V
Height
1.5mm
Length
4.5mm
Width
2.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.096480
$0.09648
500
$0.070941
$35.4705
1000
$0.059118
$59.118
2000
$0.054236
$108.472
5000
$0.050688
$253.44
10000
$0.047152
$471.52
15000
$0.045601
$684.015
50000
$0.044839
$2241.95
DCX69-25-13 Product Details
DCX69-25-13 Overview
This device has a DC current gain of 160 @ 500mA 1V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 5V for high efficiency.As you can see, the part has a transition frequency of 200MHz.Breakdown input voltage is 20V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
DCX69-25-13 Features
the DC current gain for this device is 160 @ 500mA 1V the vce saturation(Max) is 500mV @ 100mA, 1A the emitter base voltage is kept at 5V a transition frequency of 200MHz
DCX69-25-13 Applications
There are a lot of Diodes Incorporated DCX69-25-13 applications of single BJT transistors.