PN2369 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
PN2369 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
HTS Code
8541.21.00.95
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT APPLICABLE
[email protected] Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Power - Max
350mW
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 1V
Current - Collector Cutoff (Max)
400nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
200mA
Turn Off Time-Max (toff)
18ns
Turn On Time-Max (ton)
12ns
RoHS Status
ROHS3 Compliant
PN2369 Product Details
PN2369 Overview
In this device, the DC current gain is 40 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 250mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 15V maximal voltage - Collector Emitter Breakdown.
PN2369 Features
the DC current gain for this device is 40 @ 10mA 1V the vce saturation(Max) is 250mV @ 1mA, 10mA
PN2369 Applications
There are a lot of Rochester Electronics, LLC PN2369 applications of single BJT transistors.