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PN2369

PN2369

PN2369

Rochester Electronics, LLC

PN2369 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

PN2369 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.21.00.95
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
[email protected] Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 350mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 1V
Current - Collector Cutoff (Max) 400nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 200mA
Turn Off Time-Max (toff) 18ns
Turn On Time-Max (ton) 12ns
RoHS Status ROHS3 Compliant
PN2369 Product Details

PN2369 Overview


In this device, the DC current gain is 40 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.When VCE saturation is 250mV @ 1mA, 10mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 15V maximal voltage - Collector Emitter Breakdown.

PN2369 Features


the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 250mV @ 1mA, 10mA

PN2369 Applications


There are a lot of Rochester Electronics, LLC PN2369 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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