BC636TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 150mA 2V.As it features a collector emitter saturation voltage of -500mV, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.In extreme cases, the collector current can be as low as 1A volts.
BC636TA Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
BC636TA Applications
There are a lot of ON Semiconductor BC636TA applications of single BJT transistors.
- Muting
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- Inverter
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- Driver
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- Interface
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