BUV22G Overview

This device has a DC current gain of 20 @ 10A 4V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 2.5A, 20A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 40A.Single BJT transistor contains a transSingle BJT transistorion frequency of 8MHz.During maximum operation, collector current can be as low as 40A volts.

BUV22G Features

the DC current gain for this device is 20 @ 10A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 2.5A, 20A
the emitter base voltage is kept at 7V
the current rating of this device is 40A
a transition frequency of 8MHz

BUV22G Applications

There are a lot of ON Semiconductor BUV22G applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface