BC847CLT3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847CLT3G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847CLT3G Applications
There are a lot of ON Semiconductor BC847CLT3G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
