BC848BWT1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.A transition frequency of 100MHz is present in the part.Input voltage breakdown is available at 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC848BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848BWT1G Applications
There are a lot of ON Semiconductor BC848BWT1G applications of single BJT transistors.
- Inverter
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- Muting
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- Interface
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- Driver
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