NJVNJD2873T4G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 5V can achieve high levels of efficiency.65MHz is present in the transition frequency.The breakdown input voltage is 50V volts.During maximum operation, collector current can be as low as 2A volts.
NJVNJD2873T4G Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 50mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 65MHz
NJVNJD2873T4G Applications
There are a lot of ON Semiconductor NJVNJD2873T4G applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
