FSB660 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
FSB660 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PDSO-G3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
500mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
2A
Transition Frequency
75MHz
Frequency - Transition
75MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.09000
$0.09
500
$0.0891
$44.55
1000
$0.0882
$88.2
1500
$0.0873
$130.95
2000
$0.0864
$172.8
2500
$0.0855
$213.75
FSB660 Product Details
FSB660 Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 200mA, 2A.75MHz is present in the transition frequency.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
FSB660 Features
the DC current gain for this device is 100 @ 500mA 2V the vce saturation(Max) is 350mV @ 200mA, 2A a transition frequency of 75MHz
FSB660 Applications
There are a lot of Rochester Electronics, LLC FSB660 applications of single BJT transistors.