BCW70LT1G Overview

This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -300mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 500μA, 10mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Breakdown input voltage is 45V volts.Collector current can be as low as 100mA volts at its maximum.

BCW70LT1G Features

the DC current gain for this device is 215 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA

BCW70LT1G Applications

There are a lot of ON Semiconductor BCW70LT1G applications of single BJT transistors.

• Interface
• Muting
• Inverter
• Driver