BCX17LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BCX17LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-45V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BCX17
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
620mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
620mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
940μm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.069480
$0.06948
500
$0.051088
$25.544
1000
$0.042574
$42.574
2000
$0.039058
$78.116
5000
$0.036503
$182.515
10000
$0.033956
$339.56
15000
$0.032840
$492.6
50000
$0.032291
$1614.55
BCX17LT1G Product Details
BCX17LT1G Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 620mV ensures maximum design flexibility.A VCE saturation (Max) of 620mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.Single BJT transistor can be broken down at a voltage of 45V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCX17LT1G Features
the DC current gain for this device is 100 @ 100mA 1V a collector emitter saturation voltage of 620mV the vce saturation(Max) is 620mV @ 50mA, 500mA the emitter base voltage is kept at 5V the current rating of this device is -500mA
BCX17LT1G Applications
There are a lot of ON Semiconductor BCX17LT1G applications of single BJT transistors.