2N5087RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
2N5087RLRAG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
625mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
50mA
Frequency - Transition
40MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.03000
$0.03
500
$0.0297
$14.85
1000
$0.0294
$29.4
1500
$0.0291
$43.65
2000
$0.0288
$57.6
2500
$0.0285
$71.25
2N5087RLRAG Product Details
2N5087RLRAG Overview
This device has a DC current gain of 250 @ 100μA 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
2N5087RLRAG Features
the DC current gain for this device is 250 @ 100μA 5V the vce saturation(Max) is 300mV @ 1mA, 10mA the supplier device package of TO-92-3
2N5087RLRAG Applications
There are a lot of Rochester Electronics, LLC 2N5087RLRAG applications of single BJT transistors.