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2N5087RLRAG

2N5087RLRAG

2N5087RLRAG

Rochester Electronics, LLC

2N5087RLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N5087RLRAG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 40MHz
RoHS StatusROHS3 Compliant
In-Stock:266613 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.03000$0.03
500$0.0297$14.85
1000$0.0294$29.4
1500$0.0291$43.65
2000$0.0288$57.6
2500$0.0285$71.25

2N5087RLRAG Product Details

2N5087RLRAG Overview


This device has a DC current gain of 250 @ 100μA 5V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 1mA, 10mA.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

2N5087RLRAG Features


the DC current gain for this device is 250 @ 100μA 5V
the vce saturation(Max) is 300mV @ 1mA, 10mA
the supplier device package of TO-92-3

2N5087RLRAG Applications


There are a lot of Rochester Electronics, LLC 2N5087RLRAG applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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