BSP52T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BSP52T1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
1997
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
800mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
BSP52
Pin Count
4
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
800mW
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 500mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1.3V @ 500μA, 500mA
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1.3V
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
90V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
1A
Height
1.57mm
Length
6.5mm
Width
3.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.49000
$0.49
500
$0.4851
$242.55
1000
$0.4802
$480.2
1500
$0.4753
$712.95
2000
$0.4704
$940.8
2500
$0.4655
$1163.75
BSP52T1G Product Details
BSP52T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.3V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.3V @ 500μA, 500mA.Continuous collector voltages of 1A should be maintained to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 1A volts.
BSP52T1G Features
the DC current gain for this device is 2000 @ 500mA 10V a collector emitter saturation voltage of 1.3V the vce saturation(Max) is 1.3V @ 500μA, 500mA the emitter base voltage is kept at 5V the current rating of this device is 1A
BSP52T1G Applications
There are a lot of ON Semiconductor BSP52T1G applications of single BJT transistors.