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BD234G

BD234G

BD234G

ON Semiconductor

BD234G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD234G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 25W
Peak Reflow Temperature (Cel) 260
Current Rating -2A
Frequency 3MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BD234
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 1A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 45V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage 600mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.204845 $0.204845
10 $0.193250 $1.9325
100 $0.182312 $18.2312
500 $0.171993 $85.9965
1000 $0.162257 $162.257
BD234G Product Details

BD234G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 1A 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -2A.In the part, the transition frequency is 3MHz.The maximum collector current is 2A volts.

BD234G Features


the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 3MHz

BD234G Applications


There are a lot of ON Semiconductor BD234G applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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