BD435S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD435S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
LIFETIME (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
761mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
32V
Max Power Dissipation
36W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
4A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BD435
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
36W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
32V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 5V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
32V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
200mV
Collector Base Voltage (VCBO)
32V
Emitter Base Voltage (VEBO)
5V
hFE Min
50
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.096000
$6.096
10
$5.750943
$57.50943
100
$5.425418
$542.5418
500
$5.118319
$2559.1595
1000
$4.828603
$4828.603
BD435S Product Details
BD435S Overview
DC current gain in this device equals 40 @ 10mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As you can see, the part has a transition frequency of 3MHz.Collector current can be as low as 4A volts at its maximum.
BD435S Features
the DC current gain for this device is 40 @ 10mA 5V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 3MHz
BD435S Applications
There are a lot of ON Semiconductor BD435S applications of single BJT transistors.