BD441STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 500mA 1V.As it features a collector emitter saturation voltage of 800mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is 4A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A maximum collector current of 4A volts can be achieved.
BD441STU Features
the DC current gain for this device is 40 @ 500mA 1V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
BD441STU Applications
There are a lot of ON Semiconductor BD441STU applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter