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BD679AS

BD679AS

BD679AS

ON Semiconductor

BD679AS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BD679AS Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Number of Pins 3
Weight 760.986249mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 80V
Max Power Dissipation 40W
Current Rating 4A
Base Part Number BD679
Number of Elements 1
Polarity NPN
Voltage 80V
Element Configuration Single
Current 2A
Power Dissipation 40W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 10MHz
Collector Emitter Saturation Voltage 2.8V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 750
Continuous Collector Current 4A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.66000 $0.66
10 $0.57100 $5.71
100 $0.42900 $42.9
500 $0.33984 $169.92
1,000 $0.26550 $0.2655
BD679AS Product Details

BD679AS Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 2A 3V DC current gain.A collector emitter saturation voltage of 2.8V ensures maximum design flexibility.A VCE saturation (Max) of 2.8V @ 40mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 4A for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).As you can see, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 4A volts.

BD679AS Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 10MHz

BD679AS Applications


There are a lot of ON Semiconductor BD679AS applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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