BD679AS datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
BD679AS Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Weight
760.986249mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
40W
Current Rating
4A
Base Part Number
BD679
Number of Elements
1
Polarity
NPN
Voltage
80V
Element Configuration
Single
Current
2A
Power Dissipation
40W
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
2.8V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
4A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.66000
$0.66
10
$0.57100
$5.71
100
$0.42900
$42.9
500
$0.33984
$169.92
1,000
$0.26550
$0.2655
BD679AS Product Details
BD679AS Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 2A 3V DC current gain.A collector emitter saturation voltage of 2.8V ensures maximum design flexibility.A VCE saturation (Max) of 2.8V @ 40mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltage should be kept at 4A for high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).As you can see, the part has a transition frequency of 10MHz.In extreme cases, the collector current can be as low as 4A volts.
BD679AS Features
the DC current gain for this device is 750 @ 2A 3V a collector emitter saturation voltage of 2.8V the vce saturation(Max) is 2.8V @ 40mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 4A a transition frequency of 10MHz
BD679AS Applications
There are a lot of ON Semiconductor BD679AS applications of single BJT transistors.