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BCX17T116

BCX17T116

BCX17T116

ROHM Semiconductor

BCX17T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

BCX17T116 Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 425mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -500mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number BCX17
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type NPN
Transistor Type PNP
Collector Emitter Voltage (VCEO) 620mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 620mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 45V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 250MHz
Collector Emitter Saturation Voltage -620mV
Collector Base Voltage (VCBO) -50V
Emitter Base Voltage (VEBO) -5V
hFE Min 100
Continuous Collector Current -500mA
VCEsat-Max 0.6 V
Collector-Base Capacitance-Max 15pF
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
BCX17T116 Product Details

BCX17T116 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 1V.A collector emitter saturation voltage of -620mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 620mV @ 50mA, 500mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Parts of this part have transition frequencies of 250MHz.In extreme cases, the collector current can be as low as 500mA volts.

BCX17T116 Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -620mV
the vce saturation(Max) is 620mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 250MHz

BCX17T116 Applications


There are a lot of ROHM Semiconductor BCX17T116 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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