NSV2029M3T5G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 5mA, 50mA.Single BJT transistor is possible to have a collector current as low as 150mA volts at Single BJT transistors maximum.

NSV2029M3T5G Features

the DC current gain for this device is 120 @ 1mA 6V
the vce saturation(Max) is 500mV @ 5mA, 50mA

NSV2029M3T5G Applications

There are a lot of ON Semiconductor NSV2029M3T5G applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface