MJD31C-13 Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 1.2V @ 375mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 3A in order to achieve high efficiency.Emitter base voltages of 6V can achieve high levels of efficiency.In this part, there is a transition frequency of 3MHz.Single BJT transistor can be broken down at a voltage of 100V volts.A maximum collector current of 3A volts can be achieved.

MJD31C-13 Features

the DC current gain for this device is 10 @ 3A 4V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 3MHz

MJD31C-13 Applications

There are a lot of Diodes Incorporated MJD31C-13 applications of single BJT transistors.

• Muting
• Driver
• Inverter
• Interface