ZXTP25012EFHTA Overview

This device has a DC current gain of 500 @ 10mA 2V, which is the ratio between the collector current and the base current.The collector emitter saturation voltage is -210mV, which allows for maximum design flexibility.When VCE saturation is 210mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.310MHz is present in the transition frequency.Input voltage breakdown is available at 12V volts.The maximum collector current is 4A volts.

ZXTP25012EFHTA Features

the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 210mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 310MHz

ZXTP25012EFHTA Applications

There are a lot of Diodes Incorporated ZXTP25012EFHTA applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter