BVSS84LT1G

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Manufacturer part number:BVSS84LT1G

Manufacturer:ON Semiconductor

Description:BVSS84LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:BVSS84LT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	225mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	225mW
Turn On Delay Time	3.6 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	10 Ω @ 100mA, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	36pF @ 5V
Current - Continuous Drain (Id) @ 25°C	130mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 10V
Rise Time	9.7ns
Drain to Source Voltage (Vdss)	50V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	1.7 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	130mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-50V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free