KSA928AYTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSA928AYTA Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Number of Pins
3
Weight
371.1027mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-30V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-2A
Frequency
120MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
KSA928
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
120MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
30V
Transition Frequency
120MHz
Collector Emitter Saturation Voltage
-2V
Max Breakdown Voltage
30V
Collector Base Voltage (VCBO)
-30V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Height
8mm
Length
4.9mm
Width
3.9mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.10474
$0.20948
6,000
$0.09919
$0.59514
10,000
$0.09086
$0.9086
50,000
$0.07882
$3.941
KSA928AYTA Product Details
KSA928AYTA Overview
DC current gain in this device equals 160 @ 500mA 2V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -2V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 2V @ 30mA, 1.5A means Ic has reached its maximum value(saturated).Emitter base voltages of -5V can achieve high levels of efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.120MHz is present in the transition frequency.As a result, it can handle voltages as low as 30V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
KSA928AYTA Features
the DC current gain for this device is 160 @ 500mA 2V a collector emitter saturation voltage of -2V the vce saturation(Max) is 2V @ 30mA, 1.5A the emitter base voltage is kept at -5V the current rating of this device is -2A a transition frequency of 120MHz
KSA928AYTA Applications
There are a lot of ON Semiconductor KSA928AYTA applications of single BJT transistors.