CPH6354-TL-W

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Manufacturer part number:CPH6354-TL-W

Manufacturer:ON Semiconductor

Description:CPH6354-TL-W datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:CPH6354-TL-W Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e6
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Reach Compliance Code	not_compliant
JESD-30 Code	R-PDSO-G6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.6W Ta
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	5.8 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 20V
Current - Continuous Drain (Id) @ 25°C	4A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	78 ns
Continuous Drain Current (ID)	4A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	4A
Drain-source On Resistance-Max	0.1Ohm
Pulsed Drain Current-Max (IDM)	16A
DS Breakdown Voltage-Min	60V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free