IXFC16N80P

new-10%

Manufacturer part number:IXFC16N80P

Manufacturer:IXYS

Description:MOSFET N-CH 800V 9A ISOPLUS220

Case Package:SOT-23

Datasheet:IXFC16N80P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS220™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HiPerFET™, PolarHT™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	150W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	150W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	650m Ω @ 8A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Rise Time	32ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	29 ns
Turn-Off Delay Time	75 ns
Continuous Drain Current (ID)	9A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.65Ohm
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	48A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	RoHS Compliant