SI7413DN-T1-GE3

new-10%

Manufacturer part number:SI7413DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 20V 13.2A 3.8W 15mohm @ 4.5V

Case Package:SOT-23

Datasheet:SI7413DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
JESD-30 Code	S-XDSO-C5
Number of Elements	1
Power Dissipation-Max	1.5W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	15m Ω @ 13.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 400μA
Current - Continuous Drain (Id) @ 25°C	8.4A Ta
Gate Charge (Qg) (Max) @ Vgs	51nC @ 4.5V
Rise Time	50ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	50 ns
Turn-Off Delay Time	200 ns
Continuous Drain Current (ID)	8.4A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.015Ohm
Pulsed Drain Current-Max (IDM)	30A
DS Breakdown Voltage-Min	20V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant