SSTA06T116 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 250mV @ 10mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.The base voltage of the emitter can be kept at 4V to achieve high efficiency.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.An input voltage of 80V volts is the breakdown voltage.Supplier device package SST3 comes with the product.Detection of Collector Emitter Breakdown at 80V maximal voltage is present.In extreme cases, the collector current can be as low as 500mA volts.
SSTA06T116 Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
the supplier device package of SST3
SSTA06T116 Applications
There are a lot of ROHM Semiconductor SSTA06T116 applications of single BJT transistors.
- Muting
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- Interface
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- Driver
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- Inverter
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