KSB1151YSTSTU Overview
In this device, the DC current gain is 160 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -140mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 200mA, 2A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).When collector current reaches its maximum, it can reach 5A volts.
KSB1151YSTSTU Features
the DC current gain for this device is 160 @ 2A 1V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at -7V
the current rating of this device is -5A
KSB1151YSTSTU Applications
There are a lot of ON Semiconductor KSB1151YSTSTU applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
