NSS20501UW3T2G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 2A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 6V to gain high efficiency.150MHz is present in the transition frequency.There is a breakdown input voltage of 20V volts that it can take.Single BJT transistor is possible to have a collector current as low as 5A volts at Single BJT transistors maximum.
NSS20501UW3T2G Features
the DC current gain for this device is 200 @ 2A 2V
the vce saturation(Max) is 125mV @ 400mA, 4A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
NSS20501UW3T2G Applications
There are a lot of ON Semiconductor NSS20501UW3T2G applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
